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DOI:10.1109/TED.2013.2265320 - Corpus ID: 31461151
@article{Khandelwal2013RobustSC, title={Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design}, author={Sourabh Khandelwal and Chandan Yadav and Shantanu Agnihotri and Yogesh Singh Chauhan and Arnaud Curutchet and Thomas Zimmer and J-C. De Jaeger and Nicolas Defrance and Tor A. Fjeldly}, journal={IEEE Transactions on Electron Devices}, year={2013}, volume={60}, pages={3216-3222}, url={https://api.semanticscholar.org/CorpusID:31461151}}- S. Khandelwal, C. Yadav, T. Fjeldly
- Published in IEEE Transactions on Electron… 18 June 2013
- Engineering, Physics
We present an accurate and robust surface-potential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An accurate analytical surface-potential calculation, which we developed, is used to develop the drain and gate current model. The model is in excellent agreement with experimental data for both drain and gate current in all regions of device operation. We show the correct physical behavior and mathematical robustness of the…
101 Citations
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101 Citations
- S. AgnihotriSudip GhoshA. DasguptaY. ChauhanS. Khandelwal
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2013 IEEE Asia Pacific Conference on Postgraduate…
In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output…
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- Sudip GhoshA. DasguptaS. KhandelwalS. AgnihotriY. Chauhan
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In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are…
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- Liu JunYu ZhipingS. Lingling
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A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is…
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- J. Liu 刘Zhiping 志平 Yu 余L. Sun 孙
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A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is…
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The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic…
- 7
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- F. JazaeriJ. Sallese
- 2019
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IEEE Transactions on Electron Devices
This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not…
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- A. DasguptaSudip GhoshY. ChauhanS. Khandelwal
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2015 IEEE International Conference on Electron…
In this paper, we aim to present the Advances Spice Model for High Electron Mobility Transistors (ASM-HEMT). The model is currently being considered in the second phase of industry standardization by…
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- U. RadhakrishnaPilsoon ChoiD. Antoniadis
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This paper illustrates the usefulness of the physics-based compact device models in investigating the impact of device behavioral nuances on the operation and performance of the circuits and systems.…
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- D. PandaT. Lenka
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An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and…
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We present a continuous surface-potential- based electro-thermal compact model suitable for the study of intermodulation distortion IMD in GaAs HEMT devices. We have developed a precise analytical…
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Published in IEEE Transactions on Electron Devices 2013
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
S. KhandelwalC. Yadav T. Fjeldly
Figure 4 of 8
